AlGaN/GaN Heterostructure Field-Effect Transistors on Single-Crystal Bulk AlN
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Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.
We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire heterostructures and their implementation as high electron mobility transistors (HEMTs). The radial nanowire heterostructures were prepared by sequential shell growth immediately following nanowire elongation using metal-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal t...
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